Achievement of Possibly Maximum Photosynthetic Performances for Multi-Primary Laser Lighting for Indoor Farming
B Lv, M Huang, M Chen, L Xu, L Lian… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
The artificial lighting based on multiple-primary light-emitting diodes (LEDs) or multiple-
primary laser diodes (LDs) makes the diversity of colors by freely and simply adjusting the …
primary laser diodes (LDs) makes the diversity of colors by freely and simply adjusting the …
Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green …
Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous
interest within the photonics community in recent past as advantageous replacements for …
interest within the photonics community in recent past as advantageous replacements for …
Signal-Dependent Shot and Relative Intensity Noise in Channel Estimation of Laser Diode-based Indoor VLC Systems
M Yaseen, M Elamassie, S Ikki… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Laser diode (LD) powered luminaires are already gaining traction in automotive applications
and are expected to be increasingly deployed in homes and offices in the near future. This …
and are expected to be increasingly deployed in homes and offices in the near future. This …
Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers
X Qiu, Y Zhang, S Hang, Y Gao, J Kou, K Tian… - Optics …, 2020 - opg.optica.org
In this report, we propose GaN-based vertical cavity surface emitting lasers with a p-GaN/n-
GaN/p-GaN (PNP-GaN) structured current spreading layer. The PNP-GaN current spreading …
GaN/p-GaN (PNP-GaN) structured current spreading layer. The PNP-GaN current spreading …
Study on modulation bandwidth of GaN-based micro-light-emitting diodes by adjusting quantum well structure
P Yin, T Zhi, T Tao, X Liu - Nanomaterials, 2022 - mdpi.com
GaN-based blue micro-light-emitting diodes (μ-LEDs) with different structures were
designed, of which the effect of quantum well (QW) structure on modulation bandwidth was …
designed, of which the effect of quantum well (QW) structure on modulation bandwidth was …
Improvement of the Internal Quantum Efficiency of III‐Nitride Blue Micro‐Light‐Emitting Diodes by the Hole Accelerator at the Low Current Density
AC Wei, SH Wang, JR Sze… - Advanced Photonics …, 2024 - Wiley Online Library
The hole accelerator is proven to benefit the hole injection for traditional light‐emitting
diodes (LEDs) because the induced electric field provides the holes with more kinetic …
diodes (LEDs) because the induced electric field provides the holes with more kinetic …
Ultra-Wide Color Gamut of Three-Primary and Four-Primary Laser-Based Displays with Large Circadian Tunability
J Sun, L Xu, J Cui, Z Huang, Q Lin, R Lian… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
A numerical and optimization study has been well performed on both the circadian effect
and color gamut of laser-based displays (LBDs) consisted of multiple-primary laser diodes …
and color gamut of laser-based displays (LBDs) consisted of multiple-primary laser diodes …
Efficiency droop and effective active volume in GaN-based light-emitting diodes grown on sapphire and silicon substrates
We compared the efficiency droop of InGaN multiple-quantum-well (MQW) blue light-
emitting diode (LED) structures grown on silicon (111) and c-plane sapphire substrates and …
emitting diode (LED) structures grown on silicon (111) and c-plane sapphire substrates and …
Study of the surface morphology and optical characteristics in InGaN/GaN MQWs epitaxial-layers following neutron irradiation
H Shan, X Li, B Chen, L Shang, S Ma… - ECS Journal of Solid …, 2020 - iopscience.iop.org
InGaN/GaN multiple quantum wells (MQWs) film is irradiated with neutrons (1 MeV energy,
1.2× 10 14 cm− 2 total fluence). The surface morphology, film quality, and optical …
1.2× 10 14 cm− 2 total fluence). The surface morphology, film quality, and optical …
Reducing efficiency droop in (In, Ga) N/Gan light-emitting diodes by improving current spreading with electron-blocking layers of the same size as the N-pad
In this study, the traditional electron-blocking layer (EBL) in (In, Ga) N/GaN light-emitting
diodes is replaced by a circular EBL that is the same size as the n-pad. The three …
diodes is replaced by a circular EBL that is the same size as the n-pad. The three …