A major obstacle limiting diamond electronics is dislocations, which deteriorate device
properties. As threading dislocations (TDs) are normally inherited from the substrate to the …

Diamond-based rectifiers are promising devices for the development of next-generation
power electronics. However, the present device structure limits current operation as low as 5 …

Vertical architectures in diamond Schottky barrier diodes (VSBDs) are favorable for realizing
high-current operation. However, a major obstacle affecting performance is the presence of …

In this paper, we systematically investigate the influence of growth rate on the incorporation
of silicon in single crystal diamond. The intensity of SiV− center is significantly enhanced …

Heavy boron‐doping layer in diamond can be responsible for the generation of extended
defects during the growth processes (Blank et al., Diam. Relat. Mater. 17, 1840 (2008)). As …

The method of electron-beam-induced current (EBIC) was used to visualize the defect sites
on a p-type (boron-doped) diamond (001) film. For this purpose, an Ag-Schottky layer (~ 2 …

The corner architecture Schottky barrier diode (SBD) structure is proposed as an alternative
vertical architecture for the realization of high power, high temperature, single crystal …

In this paper, we introduce a set of experiments and analyses to comprehensively correlate
the epitaxial structural defects and electrical characteristics in the pseudovertical …

We characterized OH-terminated diamond (111) surfaces which show step-terrace (ST) and
bunching-step (BS) regions from contact potential difference (CPD) and current to …

The development of new power devices taking full advantage of the potential of diamond
has prompted the design of innovative 3D structures. This implies the overgrowth towards …