Analysis of High-Temperature Effects on I n A s/I n 0.3 A l 0.7 A s/I n S b/I n 0.3 A l 0.7 A s pHEMTs on Accessing RF/Analog performance: A Machine Learning …
GLV Prasad, VN Kollu, M Sailaja… - … on Electrical and …, 2024 - Springer
In this paper, we delve into the intriguing realm of Pseudo-morphic High Electron Mobility
Transistors (pHEMTs) composed of I n A s/I n 0.3 A l 0.7 A s/I n S b/I n 0.3 A l 0.7 A s layers …
Transistors (pHEMTs) composed of I n A s/I n 0.3 A l 0.7 A s/I n S b/I n 0.3 A l 0.7 A s layers …
Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications
This paper presents a comprehensive investigation into the DC analog and AC microwave
performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT …
performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT …
RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect
M Khaouani, H Bencherif, A Hamdoune… - … on Electrical and …, 2021 - Springer
In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT)
In 0.3 Al 0.7 As/InAs/InSb/In 0.3 Al 0.7 using Silvaco-TCAD. RF and analog electrical …
In 0.3 Al 0.7 As/InAs/InSb/In 0.3 Al 0.7 using Silvaco-TCAD. RF and analog electrical …