Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Ferroelectric materials are considered ideal for emerging memory devices owing to their
characteristic remanent polarization, which can be switched by applying a sufficient electric …

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions
in Hf1-xZrxO2 by first principle calculations | Applied Physics Reviews | AIP Publishing Skip …

Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …

Zirconium oxide and zirconium-rich Zr x Hf1–x O2 thin films have attracted attention owing to
their switching stability and significant promise for commercial applications such as high …

Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB)
between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 …

The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …

Dielectric electrostatic capacitors1, due to their ultrafast charge-discharge capability, are
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …

The size and electric field dependent induction of polarization in antiferroelectric ZrO2 is the
key to several technological applications that are unimaginable a decade ago. However, the …