Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin …
A bottom-up process from precursor development for tin to plasma-enhanced atomic layer
deposition (PEALD) for tin (IV) oxide and its successful implementation in a working thin-film …
deposition (PEALD) for tin (IV) oxide and its successful implementation in a working thin-film …
Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor
Low band gap ion conducting Li 2 ZnO 2 thin film has been synthesized by low cost solution
processed technique and has been employed to fabricate low operating voltage metal oxide …
processed technique and has been employed to fabricate low operating voltage metal oxide …
Centimeter-Scale Nanoporous 2D Membranes and Ion Transport: Porous MoS2 Monolayers in a Few-Layer Matrix
Two-dimensional nanoporous membranes have received attention as catalysts for energy
generation and membranes for liquid and gas purification but controlling their porosity and …
generation and membranes for liquid and gas purification but controlling their porosity and …
Characterization studies of the structure and properties of Zr-doped SnO2 thin films by spin-coating technique
Transparent electrodes made of transparent conductive oxides materials are widely used in
optoelectronic devices. The zirconium doped tin oxide films as transparent conductive …
optoelectronic devices. The zirconium doped tin oxide films as transparent conductive …
[HTML][HTML] Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO)
films have been investigated. Since a state of tensile stress is available in as-deposited …
films have been investigated. Since a state of tensile stress is available in as-deposited …
Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal …
SnO2 transistors show great promise as an alternative to existing In2O3-based transistors,
considering their abundance and similar electronic properties. However, they suffer from …
considering their abundance and similar electronic properties. However, they suffer from …
A novel nondestructive testing method for amorphous Si–Sn–O films
Traditional methods to evaluate the quality of amorphous silicon-substituted tin oxide (a-
STO) semiconductor film are destructive and time-consuming. Here, a novel non-destructive …
STO) semiconductor film are destructive and time-consuming. Here, a novel non-destructive …
[HTML][HTML] Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate
Z He, X Zhang, X Wei, D Luo, H Ning, Q Ye, R Wu… - Membranes, 2022 - mdpi.com
Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor
devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior …
devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior …