The thermal energy transport in semiconductors is mostly determined by phonon transport.
However in polar semiconductors like GaN electronic contribution to the thermal transport is …

In this article, we use a semiclassical low-field mobility modeling framework, which includes
all relevant scattering mechanisms, to examine the dependence of electron mobility on 2-D …

In this paper, several epitaxial variations influencing the two-dimensional electron gas
(2DEG) in AlGaN/AlN/GaN heterostructures are investigated. The effects of an n-doped …

In this paper, electrical characterizations by C (VG) and ID (VG) and comparison with 1D
Schrödinger-Poisson simulations are carried out to investigate the effects of AlN layer …

The low field electron mobility of Al 2 O 3/GaN channel is calculated using a semi-classical
framework. The aim is to obtain the mobility as a function of the electron sheet density and …

The hole mobility enhancement mechanism of wurtzite (0001)-oriented gallium nitride
(GaN)/AlN heterojunction quantum well (QW) under stress engineering is investigated to …

The results of the study of the influence of Fe segregation into the unintentionally doped
GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on …

Interface roughness (IFR) scattering significantly impacts the mobility of two-dimensional
electron gases (2DEGs) in heterostructures. While existing models for IFR scattering have …

High electron mobility transistors (HEMTs) consisting of GaN and its alloys, most commonly
AlGaN, have been gaining popularity as the next generation of high-speed devices for …

Herein, the physical mechanism of the GaN interlayer for improving 2D electron gas (2DEG)
mobility in the InGaN channel using an intersub‐band scattering model is systematically …