This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Interface‐type (IT) resistive switching (RS) memories are promising for next generation
memory and computing technologies owing to the filament‐free switching, high on/off ratio …

Nanoscale redox reactions in transition metal oxides are believed to be the physical
foundation of memristive devices, which present a highly scalable, low-power alternative for …

Pavlovian conditioning, a classical case of associative learning in a biological brain, is
demonstrated using the Ni/Nb-SrTiO3/Ti memristive device with intrinsic forgetting properties …

We demonstrate reversible control of magnetization and anisotropy in La 0.67 Sr 0.33 MnO
3 films through interfacial oxygen migration. Gd metal capping layers deposited onto La 0.67 …

Abstract In recent years Resistive Random Access Memory (RRAM) is emerging as the most
promising candidate to substitute the present Flash Technology in the non-volatile memory …

The understanding of the resistive switching mechanisms in perovskites is of particular
importance for the development of novel non-volatile memories. Nanoscale investigations …

Epitaxial BaTiO 3 (BTO) films have been grown on Nb-doped SrTiO 3 (NSTO)(0 0 1)
substrate. The ferroelectric resistive switching effect and memristive behaviours have been …

Deepening the understanding of interface-type resistive switching (RS) in metal/oxide
heterojunctions is a key step for the development of high-performance memristors and …

Electrical properties of nanoscale Au islands on n-type TiO 2, which form a Schottky junction
nanodiode, have been investigated using conductive atomic force microscopy at ultra-high …