Leading-edge thin-layer MOSFET potential modeling toward short-channel effect suppression and device optimization
FÁ Herrera, Y Hirano, T Iizuka… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
A novel compact model has been developed, which considers the origin of the short-
channel effect (SCE) on the basis of the potential distribution along the channel. Thus an …
channel effect (SCE) on the basis of the potential distribution along the channel. Thus an …
Design considerations for II–VI multi-gate transistors: the case of cadmium sulfide
In this paper, we report a feasibility study of MuGFETs (multi-gate field effect transistors)
devices using solution-based cadmium sulfide films as the semiconductor. The simulations …
devices using solution-based cadmium sulfide films as the semiconductor. The simulations …
3D structure simulation and proceeding to extract mobility parameters for FinFETs varying channel length
JE Conde, A Cerdeira - 2010 7th International Conference on …, 2010 - ieeexplore.ieee.org
In this paper we present the 3D trapezoidal structure for analyzing FinFET MOSFETs using
three different mesh regions, one at the top and two in the sidewalls of the fin, which allows …
three different mesh regions, one at the top and two in the sidewalls of the fin, which allows …
[PDF][PDF] Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization
A ITO - scholar.archive.org
ABSTRACT A novel compact model has been developed, which considers the origin of the
short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus …
short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus …
[PDF][PDF] Improvement of Drive Current Prediction in FinFET using Full 3D Process/Stress/Device Simulations
TH Yu, JH Ho, CW Liu, CC Wang, WY Chen, HS Chen… - 2012 - researchgate.net
In this work, a 3D process and device simulation study of FinFET devices is reported.
Mobility models on (100) and (110) surfaces are first calibrated to planar data and the stress …
Mobility models on (100) and (110) surfaces are first calibrated to planar data and the stress …