Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily
superior to those of the currently available wide-bandgap semiconductors for deep …

Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …

The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

Three possible reasons are proposed as the cause the enhanced responsivities of the
detectors with Ag nanoparticles: i) the depletion width at the metal-semiconductor interface …

Ga_2O_3 photodetectors with interdigitated electrodes have been designed and fabricated,
and the Ga_2O_3 area exposed to illumination acts as the active layer of the photodetector …

III nitrides and UV detection Page 1 Journal of Physics: Condensed Matter III nitrides and UV
detection To cite this article: E Muñoz et al 2001 J. Phys.: Condens. Matter 13 7115 View the …

Epitaxial pin structures grown on native GaN substrates have been fabricated and used to
extract the impact ionization coefficients in GaN. The photomultiplication method has been …

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great
demand for several technologies, but require the development of novel device structures …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …