Benefitting from the continuous innovations in semiconductor materials and device
fabricating techniques, ultraviolet (UV) photodetectors have been successfully used in …

Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to
their extensive applications in the civil and military fields. Wide bandgap semiconductor …

Optoelectronic logic gates (OELGs) are promising building blocks for next-generation logic
circuits and potential applications in light detection and ranging, machine vision and real …

Inspired by nanoscience and nanoengineering, numerous nanostructured materials
developed by multidisciplinary approaches exhibit excellent photoelectronic properties …

GaN-based photodetectors are strongly desirable in many advanced fields, such as space
communication, environmental monitoring, etc. However, the slow photo-response speed in …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …

The progress of the Internet‐of‐Things in the past few years has necessitated the support of
high‐performance sensors. Schottky‐contacted nanowire sensors have attracted …

Here we report the fabrication of high-performance ultraviolet photodetectors based on a
heterojunction device structure in which ZnO quantum dots were used to decorate Zn2SnO4 …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …