Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
Axial p–n and p–i–n junctions in GaAs 0.7 P 0.3 nanowires are demonstrated and analyzed
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …
Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
D Ruhstorfer, A Lang, S Matich, M Döblinger… - …, 2021 - iopscience.iop.org
We report a comprehensive study of the growth dynamics in highly periodic, composition
tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam …
tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam …
Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires
The electrical properties of passivated and non-passivated axial p–i–n junctions in GaAsP
nanowires are investigated using electron-beam induced current microscopy. Organized self …
nanowires are investigated using electron-beam induced current microscopy. Organized self …
GaAs-on-Si solar cells based on nanowire arrays grown by molecular beam epitaxy
R De Lépinau - 2020 - theses.hal.science
Nanowires (NW) epitaxially grown on Si substrate are efficient light absorbers and allow to
integrate high-quality III-V materials on Si by preventing defects induced by the lattice …
integrate high-quality III-V materials on Si by preventing defects induced by the lattice …
Caractérisation électrique de nanofils de semi-conducteurs III-V pour des applications photovoltaïques
O Saket - 2020 - theses.hal.science
Malgré le potentiel des nanofils (NFs) semi-conducteurs pour des applications
photovoltaïques, la performance des cellules solaires à NFs reste toujours en deçà de celle …
photovoltaïques, la performance des cellules solaires à NFs reste toujours en deçà de celle …
Computational Study of the Ene/Rearrangement Reaction between (F3C)2B═NMe2, 1, and Acetonitrile: Reactant-Catalyzed Mechanism of the Ketenimine–Nitrile …
SV Barbary, TR Bryan, TM Gilbert - The Journal of Physical …, 2019 - ACS Publications
The reaction between (F3C) 2B═ NMe2, 1, and acetonitrile at low temperature in pentane
yields a bora-acetonitrile rather than the expected coordination complex. This appears to …
yields a bora-acetonitrile rather than the expected coordination complex. This appears to …
Diameter engineering in III-V nanowire heterostructures-Experiments and modelling
A Pishchagin - 2021 - theses.hal.science
III-V semiconductor nanowires are highly promising building blocks for various applications.
However, the full potential of nanowire-based devices will only be realized if the nanowire …
However, the full potential of nanowire-based devices will only be realized if the nanowire …
[引用][C] Fabrication and characterization of III-V nanowire solar cells on silicon
C Tong, R de Lépinau, A Scaccabarozzi, F Oehler…