Class-E power amplifiers incorporating fingerprint augmentation with combinatorial security primitives for machine-learning-based authentication in 65 nm CMOS

Y Shen, J Xu, J Yi, E Chen… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
One means by which the security of Internet-of-Things (IoT)-enabled devices may be
augmented is through radio-frequency fingerprinting-based authentication methods. As …

Aging compensation in a class-A high-frequency amplifier with DC temperature measurements

J Altet, X Aragones, E Barajas, X Gisbert, S Martínez… - Sensors, 2023 - mdpi.com
One of the threats to nanometric CMOS analog circuit reliability is circuit performance
degradation due to transistor aging. To extend circuit operating life, the bias of the main …

RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling

A Otero-Carrascal, D Chaparro-Ortiz, P Srinivasan… - Micromachines, 2024 - mdpi.com
Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of
charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of …

22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability

G Bossu, S Syed, S Evseev, JAS Jerome… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Power Amplifier (PA) is a key component for embedded RF/mmWave on advanced CMOS
technologies on the way to replace the III/V technologies. PA reliability has been a long …

Hot-carrier-injection resilient RF power amplifier using adaptive bias

SM Pazos, FL Aguirre, F Palumbo, F Silveira - Microelectronics Reliability, 2020 - Elsevier
An adaptive bias strategy is proposed to harden fully integrated CMOS RF power amplifiers
against time-dependent parametric degradation due to hot carrier injection. PA transistor DC …

[PDF][PDF] Desafíos de confiabilidad en dispositivos y circuitos nano-electrónicos de radiofrecuencia

SM Pazos, F Palumbo, F Silveira - AJEA, 2020 - scholar.archive.org
Las tecnologías de integración de circuitos nanoelectrónicos basadas en silicio se acercan
al límite de su evolución. La introducción de nuevos materiales para los dispositivos de …

Sensitive Devices and Phase Noise Degradation Mechanisms on all-NMOSFET RF VCO Aging

SM Pazos, JJ Baudino, MN Joglar… - … on Electronics (CAE …, 2020 - ieeexplore.ieee.org
Device level reliability is introduced into simulations of an optimized all-NMOSFET, cross-
coupled, radiofrequency Voltage Controlled Oscillator to trace the sensitive devices and …