Near 6-GHz Sezawa Mode Surface Acoustic Wave Resonators Using AlScN on SiC
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a
4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal …
4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal …
S-band acoustoelectric amplifier in an InGaAs-AlScN-SiC architecture
Here, we report on an acoustoelectric slab waveguide heterostructure for phonon
amplification using a thin Al 0.58 Sc 0.42 N film grown directly on a 4H-SiC substrate with an …
amplification using a thin Al 0.58 Sc 0.42 N film grown directly on a 4H-SiC substrate with an …
Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate
We evidently present the integration of ferroelectric Al Sc onto a (001)-oriented silicon (Si)
substrate. Our AlScN film, having a thickness of 116 nm, shows a remnant polarization …
substrate. Our AlScN film, having a thickness of 116 nm, shows a remnant polarization …
Al0. 68Sc0. 32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 900 C
Y He, DC Moore, Y Wang, S Ware, S Ma… - arXiv preprint arXiv …, 2024 - arxiv.org
Ferroelectric (FE)-based devices show great promise for non-volatile memory applications,
yet few demonstrate reliable operation at elevated temperatures. In this work, we fabricated …
yet few demonstrate reliable operation at elevated temperatures. In this work, we fabricated …
Electrical and Structural Characterization of (002) Oriented Aluminum Scandium Nitride
X Yan, Z Lu, G Zhang, Q Ke - 2023 17th Symposium on …, 2023 - ieeexplore.ieee.org
In this paper, Al 0.8 Sc 0.2 N films with optimal orientation of (002) were deposited by DC
magnetron sputtering in a N2 and Ar environment.(002) Al 0.8 Sc 0.2 N can be controlled by …
magnetron sputtering in a N2 and Ar environment.(002) Al 0.8 Sc 0.2 N can be controlled by …
Temperature Dependence in Coercive Field of Ferroelectric AlScN Integrated on Si Substrate
This work presents the temperature dependence in the coercive field (E_c) of ferroelectric Al
0.8 Sc 0.2 N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric …
0.8 Sc 0.2 N integrated on Si substrate. This fabricated AlScN-based metal-ferroelectric …
Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films
F Yang - Advanced Electronic Materials - Wiley Online Library
Al1− xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It
combines exceptional switchable polarization (80–165 µC cm− 2), highly tunable coercive …
combines exceptional switchable polarization (80–165 µC cm− 2), highly tunable coercive …