Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Noise and Defects in Microelectronic Materials and Devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …
methods used for the study of the deep levels in GaN-based high-electron mobility …
Radiation effects in algan/gan hemts
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents an extensive investigation of the properties of the trap with activation
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies
Deep-level traps in AlGaN/GaNand AlInN/GaN-based HEMTs with different buffer doping
technologies are identified by drain current transient spectroscopy (DCTS) and low …
technologies are identified by drain current transient spectroscopy (DCTS) and low …
[HTML][HTML] Iron as a source of efficient Shockley-Read-Hall recombination in GaN
Transition metal impurities are known to adversely affect the efficiency of electronic and
optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley …
optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley …
Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer
This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping
effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs) …
effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs) …