An apparatus and method to determine a property of a substrate by measuring, in the pupil
plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation …

(54) METHOD AND APPARATUS FOR 5,412,473 A* 5/1995 Rosencwaig et al......... 356,451
ANGULAR-RESOLVED SPECTROSCOPC 5,541,731 A 7/1996 Freedenberg et al …

The present invention relates to overlay marks and methods for determining overlay error.
One aspect of the present invention relates to a continuously varying offset mark. The …

Methods and systems for performing measurements of semiconductor structures based on
high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) …

Disclosed are techniques, apparatus, and targets for determining overlay error between two
layers of a sample. In one embodiment, a method for determining overlay between a …

Methods and systems for characterizing dimensions and material properties of
semiconductor devices by full beam X-ray scatterometry are described herein. A full beam X …

An overlay measurement apparatus has a polarized light Source for illuminating a sample
with a polarized light beam and an optical system to capture light that is scattered by the …

Disclosed is a method for determining an overlay error between at least two layers in a
multiple layer sample. A sample having a plurality of periodic targets that each have a first …

Methods and systems for realizing a high brightness, liquid based x-ray source suitable for
high throughput x-ray metrology are presented herein. A high brightness x-ray source is …

Disclosed are overlay targets having flexible symmetry characteristics and metrology
techniques for measuring the overlay error between two or more successive layers of such …