Seventy-five years since the point-contact transistor: Germanium revisited

EN Sgourou, A Daskalopulu, LH Tsoukalas… - Applied Sciences, 2022 - mdpi.com
The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

Dopant profiling of ion-implanted GaAs by terahertz time-domain spectroscopy

AK Sahoo, WC Au, YC Hong, CL Pan, D Zhai… - Journal of Applied …, 2023 - pubs.aip.org
We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-
contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms …

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

D Lidsky, CR Allemang, T Hutchins-Delgado… - Applied Physics …, 2024 - pubs.aip.org
A germanium p-channel Schottky barrier metal–oxide–semiconductor field-effect transistor
(SB-MOSFET) with germanium–platinum Schottky contacts is demonstrated experimentally …