Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Two-dimensional semiconductors (2DSCs) have attracted considerable attention as
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …

High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning
can degrade the performance of electronic devices and increase their energy consumption …

The junctions formed at the contact between metallic electrodes and semiconductor
materials are crucial components of electronic and optoelectronic devices. Metal …

Density functional theory calculations are performed to unravel the nature of the contact
between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present …

The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Incorporation of two-dimensional (2D) materials in electronic devices inevitably involves
contact with metals, and the nature of this contact (Ohmic and/or Schottky) can dramatically …

Two‐dimensional (2D) materials' family with its many members and different properties has
recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D …

Two-dimensional (2D) layered materials have stimulated extensive research interest for their
unique thickness-dependent electronic and optical properties. However, the layer-number …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …