Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Review of technology for normally-off HEMTs with p-GaN gate
Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
A review of DC/DC converter-based electrochemical impedance spectroscopy for fuel cell electric vehicles
Considering transport applications, there is worldwide an increasing interest in the use of
hydrogen-energy for supplying electric powertrains. In order to extend the fuel cell lifespan …
hydrogen-energy for supplying electric powertrains. In order to extend the fuel cell lifespan …
Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs
This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability
F Zeng, JX An, G Zhou, W Li, H Wang, T Duan, L Jiang… - Electronics, 2018 - mdpi.com
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …
features in the applications of high power and high frequency devices. In this paper, we …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
[HTML][HTML] Experimental and theoretical studies of the physicochemical and mechanical properties of multi-layered TiN/SiC films: Temperature effects on the …
AD Pogrebnjak, VI Ivashchenko, PL Skrynskyy… - Composites Part B …, 2018 - Elsevier
Abstract Nanoscale multilayered TiN/SiC films are of great importance in many electronic
and industrial fields. The careful control over the structure of the laminates, nanocrystalline …
and industrial fields. The careful control over the structure of the laminates, nanocrystalline …
Online thermal resistance and reliability characteristic monitoring of power modules with Ag sinter joining and Pb, Pb-free solders during power cycling test by SiC …
Despite the rapid progression of silicon carbide (SiC) power devices, the thermal
characteristic evaluation during power cycling at high temperature (> 200° C) is an issue. In …
characteristic evaluation during power cycling at high temperature (> 200° C) is an issue. In …
Novel copper particle paste with self-reduction and self-protection characteristics for die attachment of power semiconductor under a nitrogen atmosphere
A novel die-attach material, Cu particle paste with self-reduction and self-protection
characteristics, was designed by simply adding ascorbic acid (AA) into Cu paste. The self …
characteristics, was designed by simply adding ascorbic acid (AA) into Cu paste. The self …