The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Sc-based III-nitride alloys were studied using density functional theory with special quasi-
random structure methodology. Sc x Al 1− x N and Sc x Ga 1− x N alloys are found to be …

We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

Correlated atom probe tomography, cross-sectional scanning transmission electron
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …

Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …

GaN nanowires oriented along the nonpolar a-axis were analyzed using pulsed laser atom
probe tomography (APT). Stoichiometric mass spectra were achieved by optimizing the …

Excitons in InGaN quantum wells are investigated numerically, considering random alloy
disorder and Coulomb interaction on equal footing in the Schrödinger equation. Their …

The optimisation of GaN-based electronic and optoelectronic devices requires control over
the doping of the material. However, device performance, particular for lateral transport …

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading
dislocation was observed under several microscopes (atomic force microscopy, scanning …