A review of technologies and design techniques of millimeter-wave power amplifiers
V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …
focusing on broadband design techniques. An overview of the main solid-state technologies …
Millimeter-wave modulated-signal and error-vector-magnitude measurement with uncertainty
KA Remley, DF Williams, PD Hale… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
We provide techniques to generate and characterize precision wideband millimeter-wave
modulated signals. We use predistortion to obtain a significant improvement in signal quality …
modulated signals. We use predistortion to obtain a significant improvement in signal quality …
A 200–225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination
N Sarmah, K Aufinger, R Lachner… - … Conference 2016: 42nd …, 2016 - ieeexplore.ieee.org
A 200-225 GHz SiGe combiner Power Amplifier (PA) based on a wideband 4-way power
combiner architecture is presented in this paper. The circuit is implemented in a 130 nm …
combiner architecture is presented in this paper. The circuit is implemented in a 130 nm …
A 70–80-GHz SiGe amplifier with peak output power of 27.3 dBm
HC Lin, GM Rebeiz - IEEE Transactions on Microwave Theory …, 2016 - ieeexplore.ieee.org
This paper presents a fully integrated 16-way power-combining amplifier for 67-92-GHz
applications in an advanced 90-nm silicon germanium HBT technology. The 16-way …
applications in an advanced 90-nm silicon germanium HBT technology. The 16-way …
Single and Power-Combined Linear E-Band Power Amplifiers in 0.12- m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms
E Wagner, GM Rebeiz - IEEE Transactions on Microwave …, 2019 - ieeexplore.ieee.org
This paper presents a set of wideband, fully integrated E-band power amplifiers (PAs)
designed in 0.12-μm silicon-germanium (SiGe) BiCMOS and working in the range of 60-75 …
designed in 0.12-μm silicon-germanium (SiGe) BiCMOS and working in the range of 60-75 …
An 85-GHz power amplifier utilizing a transformer-based power combiner operating beyond the self-resonance frequency
In this study, we demonstrate an 85-GHz eight-way four-stage power amplifier (PA) with
transformer-based power combiners (PCs) and power splitters (PSs) operating beyond their …
transformer-based power combiners (PCs) and power splitters (PSs) operating beyond their …
A SiGe multiplier array with output power of 5–8 dBm at 200–230 GHz
HC Lin, GM Rebeiz - IEEE Transactions on Microwave Theory …, 2016 - ieeexplore.ieee.org
This paper presents an integrated four-way power-combining multiplier for 200-230-GHz
applications in an advanced 90-nm silicon germanium HBT technology. The active multiplier …
applications in an advanced 90-nm silicon germanium HBT technology. The active multiplier …
Pole-controlled wideband 120 GHz CMOS power amplifier for wireless chip-to-chip communication in 40-nm CMOS process
This brief proposes a wideband CMOS power amplifier (PA) with flat gain using a pole-
controlled transformer in the sub-THz band for wireless chip-to-chip communication. An …
controlled transformer in the sub-THz band for wireless chip-to-chip communication. An …
MEMS chip with amplifier for 4-W power combining up to 100 GHz
H Cheng, F Hou, J Guo, W Wang… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Millimeter-wave and terahertz bands are very attractive for high-resolution radars and fifth-
generation communication and beyond; nevertheless, it is very challenging to achieve high …
generation communication and beyond; nevertheless, it is very challenging to achieve high …
A 21.56 dBm four-way current-combining power amplifier for Ka-band applications in 65-nm CMOS
Z Wang, X Liu, Z Li, X Wang, M Wang, Q Li… - IEICE Electronics …, 2022 - jstage.jst.go.jp
This paper presents a four-way current-combining Ka-band power amplifier (PA) in 65-nm
CMOS technology. A symmetrical, transmission line based four-way current combiner …
CMOS technology. A symmetrical, transmission line based four-way current combiner …