ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Memristive devices for computing
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …
resistance based on the history of applied voltage and current. These devices can store and …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth
D Ielmini - IEEE Transactions on Electron Devices, 2011 - ieeexplore.ieee.org
Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of
conductive filaments through insulating materials, such as metal oxides and chalcogenide …
conductive filaments through insulating materials, such as metal oxides and chalcogenide …
Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAM
The endurance/retention performance of HfO 2/Metal cap RRAM devices in a 1T1R
configuration shows metal cap dependence. For Hf and Ti caps, owning strong …
configuration shows metal cap dependence. For Hf and Ti caps, owning strong …
[HTML][HTML] An accurate locally active memristor model for S-type negative differential resistance in NbOx
GA Gibson, S Musunuru, J Zhang… - Applied Physics …, 2016 - pubs.aip.org
A number of important commercial applications would benefit from the introduction of easily
manufactured devices that exhibit current-controlled, or “S-type,” negative differential …
manufactured devices that exhibit current-controlled, or “S-type,” negative differential …
TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)
E Gale - Semiconductor Science and Technology, 2014 - iopscience.iop.org
The memristor is the fundamental nonlinear circuit element, with uses in computing and
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
In this letter, we study the influence of the Pt top-electrode thickness and of the chamber
atmosphere during cell operation on the resistive switching of TiN\HfO 2\Pt cells. The oxygen …
atmosphere during cell operation on the resistive switching of TiN\HfO 2\Pt cells. The oxygen …
Balancing SET/RESET Pulse for Endurance in 1T1R Bipolar RRAM
By tuning the SET/RESET pulse amplitude conditions, the pulse endurance of our 40-nm
HfO 2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure …
HfO 2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure …