A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Photonic synapses for ultrahigh‐speed neuromorphic computing
X Zhuge, J Wang, F Zhuge - physica status solidi (RRL)–Rapid …, 2019 - Wiley Online Library
Neuromorphic computing based on a non‐von Neumann architecture is a promising way for
the efficient implementation of artificial intelligence. A neuromorphic computing system is …
the efficient implementation of artificial intelligence. A neuromorphic computing system is …
Fully Integrated Patch Based on Lamellar Porous Film Assisted GaN Optopairs for Wireless Intelligent Respiratory Monitoring
Respiratory pattern is one of the most crucial indicators for accessing human health, but
there has been limited success in implementing fast-responsive, affordable, and …
there has been limited success in implementing fast-responsive, affordable, and …
Realizing Bidirectional Photocurrent in Monolithic Dual‐Mode Device for Neuromorphic Vision and Logically‐Encrypted Transmission
M Jiang, Y Zhao, L Bian, W Chen… - Advanced Functional …, 2024 - Wiley Online Library
Due to significant response contradictions, unidirectional carrier transmission of typical
semiconductor p‐n junctions limits integrated sensors and artificial synapses in a monolithic …
semiconductor p‐n junctions limits integrated sensors and artificial synapses in a monolithic …
A hybrid phototransistor neuromorphic synapse
Y Liu, W Huang, X Wang, R Liang… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
In this paper, a synaptic transistor based on the indium zinc oxide (IZO)-hafnium oxide (HfO
2) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the …
2) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the …
Impact force sensors based on gan optical devices with micropatterned pdms sponges
J Zhan, L Zhu, Z He, J Chen, L Chen… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
In this work, the fabrication and characterization of impact force sensors based on GaN
optical devices with microstructured polydimethylsiloxane (PDMS) sponge are presented …
optical devices with microstructured polydimethylsiloxane (PDMS) sponge are presented …
III-nitride microsensors for 360° angle detection
The fabrication of a miniature III-nitride angle sensor is demonstrated. A monolithic device
composed of a light emitter and four detectors is fabricated on a GaN-on-sapphire wafer. By …
composed of a light emitter and four detectors is fabricated on a GaN-on-sapphire wafer. By …
Performance of InGaN green light-emitting diodes with on-chip photodetectors based on wire-bonding and flip-chip configurations
In this work, we report the performance study of InGaN-based green light-emitting diodes
(LEDs) with on-chip photodetectors (PDs) based on wire-bonding and flip-chip …
(LEDs) with on-chip photodetectors (PDs) based on wire-bonding and flip-chip …
III-Nitride Turbidity Microsensor with an Ultrawide Measurement Range
J Chen, H Yang, Y Luo, G Lu, Z Chen… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
In this work, a turbidity microsensor based on a GaN-on-sapphire optoelectronic device is
demonstrated. The monolithic device consists of GaN diodes responsible for emitting and …
demonstrated. The monolithic device consists of GaN diodes responsible for emitting and …
Saturation behavior for a comb-like light-induced synaptic transistor
G Zhu, X Gao, Y Li, J Yuan, W Yuan… - IEEE Electron …, 2016 - ieeexplore.ieee.org
We propose and fabricate a comb-like light-induced synaptic transistor composed of two
InGaN/GaN multiple-quantum-well diodes (MQWDs) with a common base. One InGaN/GaN …
InGaN/GaN multiple-quantum-well diodes (MQWDs) with a common base. One InGaN/GaN …