Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

[HTML][HTML] Recent advances of In2O3-based thin-film transistors: A review

BK Yap, Z Zhang, GSH Thien, KY Chan… - Applied Surface Science …, 2023 - Elsevier
The electronics industry has witnessed a surge in demand for semiconductor materials,
prompting researchers to explore active semiconductors that can effectively meet the …

Thermally activated defect engineering for highly stable and uniform ALD-amorphous IGZO TFTs with high-temperature compatibility

DG Kim, WB Lee, S Lee, J Koh, B Kuh… - ACS Applied Materials …, 2023 - ACS Publications
Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …

Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator

J Li, Y Zhang, J Wang, H Yang, X Zhou… - … Applied Materials & …, 2023 - ACS Publications
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …

Selectively nitrogen doped ALD-IGZO TFTs with extremely high mobility and reliability

DG Kim, H Choi, YS Kim, DH Lee, HJ Oh… - … Applied Materials & …, 2023 - ACS Publications
Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

HY Lee, JS Hur, I Cho, CH Choi, SH Yoon… - … Applied Materials & …, 2023 - ACS Publications
Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …

Subgap states in aluminium-and hydrogen-doped zinc-oxide thin-film transistors

M Yoon, D Hyun, HS Kim - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
This study presents the Al2O3-induced hydrogen and aluminium doping effects on the
electronic structures of atomic-layer-deposited ZnO films via low-temperature measurements …

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator

J Li, Y Zhang, J Wang, H Yang, X Zhou… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Y Shi, YS Shiah, K Sim, M Sasase, J Kim… - Applied Physics …, 2022 - pubs.aip.org
Maintaining gate bias stability under negative bias stress (NBS) and positive bias stress
(PBS) is a long-standing issue in amorphous oxide semiconductor thin-film transistors …

Recent progress and perspectives of field‐effect transistors based on p‐type oxide semiconductors

T Kim, JK Jeong - physica status solidi (RRL)–Rapid Research …, 2022 - Wiley Online Library
Oxide semiconductors are considered as one of the most promising candidates for back‐
end‐of‐line transistors for monolithic 3D integration due to various advantages, such as …