The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages
over traditional Si-based semiconductors in terms of high-power and high-frequency …

GaN-on-diamond device cooling can be enhanced by reducing the effective thermal
boundary resistance (TBReff) of the GaN/diamond interface. The thermal properties of this …

Interfacial thermal transport has become a significant bottleneck in thermal management,
particularly for the electronic high-power devices represented by III-V semiconductor …

It is proven that introduction of graphene into typical heterostructures can effectively reduce
the high interfacial thermal resistance in semiconductor chips. The crystallinity of graphene …

Nanoengineering of interfaces has become an effective way to tune the thermal boundary
conductance (TBC) of heterostructures. However, the same nanostructure design can have …

Understanding the heat transfer mechanism of typical structures in high-power chips is
essential for chip design with better engineered heat transfer performance. Here, the …

Diamond substrate with superior thermal conductivity has been the most promising heat sink
to solve the heat dissipation issues in GaN-based power electronics. The phonon transport …

As one fundamental problem in materials science research, thermal transport across grain
boundaries is critical to many energy-related applications. Due to the complexity of grain …

Improving the thermal conductance at the GaN/diamond interface is crucial for boosting GaN-
based device performance and reliability. In this study, first-principles calculations and …