L Ren, L Liu, X Shu, W Lin, P Yang… - ACS Applied Materials …, 2021 - ACS Publications
Current-induced spin–orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy …
We experimentally show a giant magnetoelectric (ME) effect at room temperature in an interfacial multiferroic heterostructure consisting of L2 1-ordered Co 2 FeSi and Pb (Mg 1/3 …
Y Xiao, H Wang, EE Fullerton - Frontiers in Physics, 2022 - frontiersin.org
We report on the spin Hall effect in epitaxial Pt films with well-defined crystalline (200),(220), and (111) orientations and smooth surfaces. The magnitude of the spin Hall effect has been …
The family of Co-based Heusler compounds contains promising candidates for spintronic applications regarding their predicted Half-Metal-Magnetic nature, ultra-low magnetic …
We investigate the origin of spin-orbit torques (SOTs) in archetypical Pt/Co/MgO thin films structures by performing harmonic Hall measurements. The behavior of the dampinglike …
Spin-pumping-induced damping and interfacial Dzyaloshinskii–Moriya interaction (iDMI) have been studied in Pt/Co2FeAl/MgO systems grown on Si or MgO substrates as a function …
To optimize the writing and reading performance of magnetic random-access memory (MRAM) devices, achieving current-induced spin–orbit torque (SOT) magnetization …
PH Chen, CY Hsieh, YT Su - Materials Chemistry and Physics, 2021 - Elsevier
Understanding its resistance switching (RS) properties is beneficial to the development of resistance random access memory (RRAM). In this work, a RRAM device with a …