Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low-pressure
metalorganic vapor-phase epitaxy (LP-MOVPE) are controlled by growth conditions such as …

6,599,362 B2 7/2003 Ashby et al. 6,847,057 B1 1/2005 Gardner et al. 7,091,514 B2 8, 2006
Craven et al. 7,186.302 B2 3/2007 Chakraborty et al. 7,575,947 B2 8, 2009 Iza et al …

A freestanding GaN substrate over 2 inches in size was successfully prepared for the first
time by hydride vapor phase epitaxy (HVPE) using GaAs as a starting substrate. In the …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

Despite the rapid commercialization of III-nitride semiconductor devices for applications in
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …

A freestanding GaN substrate of over 2inch size with low dislocation density was prepared
by hydride vapor phase epitaxy (HVPE) using GaAs (111) A as a starting substrate. An SiO2 …

Selective-area growth (SAG) and epitaxial lateral overgrowth (ELO) techniques used in
group III nitride epitaxy are reviewed. Structurally controlled GaN in line patterns and dot …

Recent advances in the research, development, and commercial production of native GaN
substrates with low defect density and high structural and optical quality have attracted a …

A promising technique of selective lateral epitaxy, namely air-bridged lateral epitaxial
overgrowth, is demonstrated in order to reduce the wing tilt as well as the threading …

After a brief review on the progresses in GaN substrates by ammonothermal method and Na-
flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of …