[图书][B] Handbook of energy harvesting power supplies and applications

P Spies, M Pollak, L Mateu - 2015 - books.google.com
This book describes the fundamentals and principles of energy harvesting and provides the
necessary theory and background to develop energy harvesting power supplies. It explains …

A comparative study of charge pumping circuits for flash memory applications

OY Wong, H Wong, WS Tam, CW Kok - Microelectronics Reliability, 2012 - Elsevier
Flash memories are now widely used in many portable electronic devices, in embedded
systems and are even as replacement for computer hard disks. In flash memory systems …

A 1 V input, 3 V-to-6 V output, 58%-efficient integrated charge pump with a hybrid topology for area reduction and an improved efficiency by using parasitics

JH Tsai, SA Ko, CW Wang, YC Yen… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
This paper presents an integrated hybrid 6-stage voltage multiplier without using high-
voltage-tolerant devices. The proposed architecture obtains a good area and efficiency …

[PDF][PDF] Design of a low power dissipation and low input voltage range level shifter in CEDEC 0.18-µm CMOS process

NB Romli, M Mamun, MAS Bhuiyan… - world applied sciences …, 2012 - academia.edu
Level shifter (LS) circuits are widely used as an interface for multiple voltage domains in
modern ICs and System on Chips (SoCs). Low power dissipation is one of the main design …

A 2 kbits low power EEPROM for passive RFID tag IC

J Hu, D Wang, J Wu - Chinese Journal of Electronics, 2022 - Wiley Online Library
This paper presents a low power consumption and low cost electrically erasable
programmable read‐only memory (EEPROM) for radio frequency identification (RFID) tag …

A dual charge pump for quiescent touch sensor power supply

JM Baek, DJ Seo, JH Chun… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
This brief presents a dual charge pump suitable for touch sensor power supply applications,
where a calm standby voltage as well as quick recovery from disturbance is required. The …

cNV SRAM: CMOS technology compatible non-volatile SRAM based ultra-low leakage energy hybrid memory system

J Wang, L Wang, H Yin, Z Wei, Z Yang… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A CMOS technology compatible non-volatile SRAM (cNV SRAM) is proposed in this paper to
achieve energy efficient on-chip memory. cNV SRAM works as conventional 8T SRAM to …

A low power and low ripple CMOS high voltage generator for RFID transponder EEPROM

LF Rahman, M Marufuzzaman, L Alam, LM Sidek… - Plos one, 2020 - journals.plos.org
A high-voltage generator (HVG) is an essential part of a radio frequency identification
electrically erasable programmable read-only memory (RFID–EEPROM). An HVG circuit is …

A fully CMOS-compitible 672-bit EEPROM for passive RFID tag application

JM Baek, JH Chun, KW Kwon, J Kim… - 2010 IEEE Asian Solid …, 2010 - ieeexplore.ieee.org
This paper presents a 672-bit electrically erasable programmable read-only memory
(EEPROM) fabricated using a conventional 0.13 μm CMOS process. The write voltages are …

Topology, analysis, and CMOS implementation of switched-capacitor DC-DC converters

OY Wong, H Wong, WS Tam… - … , Series: Electronics and …, 2014 - casopisi.junis.ni.ac.rs
This review highlights various design and realization aspects of three commonly used
charge pump topologies, namely, the linear, exponential, and the Fibonacci type of charge …