Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

While silicon and gallium arsenide are dominant materials in modern micro-and
nanoelectronics, devices fabricated from them still use Si and GaAs substrates only …

We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires
as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

We have determined the critical cracking thickness, or the thickness beyond which crack
formation is favored, in GaAs films grown on Si and SiGe virtual substrates analytically and …

Achieving high-efficiency solar cells and at the same time driving down the cell cost has
been among the key objectives for photovoltaic researchers to attain a lower levelized cost …

Recent experimental measurements have shown that in GaAs with elevated threading
dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [CL …

III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with
significantly higher absorption compared to silicon. The high absorption allows for the …

Highly tensile-strained Ge thin films and quantum dots have the potential to be implemented
for high mobility metal-oxide-semiconductor field-effect transistor channels and long …

The first book to deal with the design and optimization of transistors made from strained
layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct …