[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Organic small molecule-based RRAM for data storage and neuromorphic computing
Inexpensive and flexible organic resistive memory can be easily fabricated, scaled and
stacked. Owing to these advantages, organic resistive memory is considered as a very …
stacked. Owing to these advantages, organic resistive memory is considered as a very …
High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
Using memristive properties common for titanium dioxide thin film devices, we designed a
simple write algorithm to tune device conductance at a specific bias point to 1% relative …
simple write algorithm to tune device conductance at a specific bias point to 1% relative …
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
NiO films display unipolar resistance switching characteristics, due to the electrically
induced formation and rupture of nanofilaments. While the applicative interest for possible …
induced formation and rupture of nanofilaments. While the applicative interest for possible …
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
Resistive-switching memory (RRAM) is attracting a considerable interest for the
development of high-density nonvolatile memories. However, several scaling and reliability …
development of high-density nonvolatile memories. However, several scaling and reliability …
Resistance switching memory in perovskite oxides
The resistance switching behavior has recently attracted great attentions for its application
as resistive random access memories (RRAMs) due to a variety of advantages such as …
as resistive random access memories (RRAMs) due to a variety of advantages such as …
Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide
An increasing demand for nonvolatile memory has driven extensive research on resistive
switching memory because it uses simple structures with high density, fast switching speed …
switching memory because it uses simple structures with high density, fast switching speed …
Probing Cu doped Ge0. 3Se0. 7 based resistance switching memory devices with random telegraph noise
The ultimate sensitivity of any solid state device is limited by fluctuations. Fluctuations are
manifestations of the thermal motion of matter and the discreteness of its structure which are …
manifestations of the thermal motion of matter and the discreteness of its structure which are …
Nanoscale mapping of carrier mobilities in the ballistic transports of carbon nanotube networks
J Kim, Y Oh, J Shin, M Yang, N Shin, S Shekhar… - ACS …, 2022 - ACS Publications
Much progress has been made in the nanoscale analysis of nanostructures, while the
mapping of key charge transport properties such as a carrier mobility remains a challenge …
mapping of key charge transport properties such as a carrier mobility remains a challenge …
Resistive Switching in a MoSe2-Based Memory Device Investigated Using Conductance Noise Spectroscopy
Resistive random access memory (RRAM) devices are widely considered promising
candidates for future memory and logic applications. Though their excellent performances …
candidates for future memory and logic applications. Though their excellent performances …