Recent advances in flip chip technology such as wafer bumping, package substrate, flip chip
assembly, and underfill will be presented in this study. Emphasis is placed on the latest …

In this study, the recent advances and trends in Cu–Cu hybrid bonding will be investigated.
Emphasis is placed on the definition, kinds, advantages and disadvantages, challenges …

Purpose–The purpose of this paper is to focus on through‐silicon via (TSV), with a new
concept that every chip or interposer could have two surfaces with circuits. Emphasis is …

This paper introduces the first comprehensive and accurate compact resistance-inductance-
capacitance-conductance (RLCG) model for through-silicon vias (TSVs) in 3-D ICs valid …

3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They
are different and in general the TSV (through-silicon via) separates 3D IC packaging from …

Enhanced transmission speeds, lower power consumption, better performance, and smaller
form factors are reported as advantages in many devices and applications when using 3D …

3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They
are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging …

Semiconductor industry currently utilizes copper wafer bonding as one of key technologies
for 3D integration. This review paper describes both science and technology of copper wafer …

After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …