A 0.6 V, 1.74 mW, 2.9 dB NF Inductorless Wideband LNA in 28-nm CMOS Exploiting Noise Cancellation and Current Reuse
This paper proposes an inductorless wideband common-gate (CG)-common-source (CS)
noise-cancelling (NC) low-noise amplifier (LNA) with current reuse (CR) for ultra-low voltage …
noise-cancelling (NC) low-noise amplifier (LNA) with current reuse (CR) for ultra-low voltage …
A 0.25–2.7 GHz, 0.6 V, 1.59 mW Auxiliary-Path-Free Noise-Cancelling Low-Noise Amplifier in 28 nm CMOS
An inductorless wideband auxiliary-path-free noise-cancelling (NC) low-noise amplifier
(LNA) with current reuse is proposed. In conventional NC technique, the noise of the main …
(LNA) with current reuse is proposed. In conventional NC technique, the noise of the main …
Design methodology based on the inversion coefficient for RF and mmW circuits optimization using 28 nm FD-SOI CMOS technology
MK Bouchoucha - 2024 - theses.hal.science
In response to the flourishing market demands for the new generation of IoT devices,
thiswork addresses the design and optimization of Low Noise Amplifiers (LNAs). The …
thiswork addresses the design and optimization of Low Noise Amplifiers (LNAs). The …