Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM
KY Hsiang, JY Lee, ZF Lou, FS Chang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Opposite polarity cycling recovery (OPCR) is proposed to completely restore a fatigued
antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance …
antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance …
Interval time dependent wake-up effect of HfZrO ferroelectric capacitor
Y Ding, X Yu, C Yan, Z Weng, Y Qu… - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
In this work, the wake-up effect of Hf-based ferroelectric memories has been studied as a
reliability concern, and related mechanisms have been proposed. By changing different …
reliability concern, and related mechanisms have been proposed. By changing different …
Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN
YF Chen, CH Wang, HY Shih, CY Kuo… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
A stack formed by consecutive deposition of 2 nm TaN/10 nm HfZrOx (HZO)/2 nm TaN in an
ALD tool was proposed to be sandwiched between thick PVD TiN as the promising structure …
ALD tool was proposed to be sandwiched between thick PVD TiN as the promising structure …
Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%) …
CH Wu, J Liu, XT Zheng, HF Chuang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This work systematically demonstrates a novel recovery scheme for metal–ferroelectric–
insulator–semiconductor (MFIS) ferroelectric field-effect transistor (FeFET) memory arrays …
insulator–semiconductor (MFIS) ferroelectric field-effect transistor (FeFET) memory arrays …
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit
Asymmetric field cycling recovery (AFCR) with alternating opposite low-field cycling is
proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally …
proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally …
A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices
Studies on ferroelectric (FE) device degradation are performed on “woken up” devices. The
process of waking up a device is typically done by applying a logarithmically increasing …
process of waking up a device is typically done by applying a logarithmically increasing …
Electrical Characterization of Ferroelectric Tunnel Junctions based on Hafnium Oxide for Neuromorphic Applications
J Barbot - 2023 - theses.hal.science
Ferroelectric memories have regained significant interest since the 2010s, following the
discovery of ferroelectricity in hafnium oxide. This breakthrough holds the promise of …
discovery of ferroelectricity in hafnium oxide. This breakthrough holds the promise of …