Z Huang, X Yang, T Song, H Qi… - Tsinghua Science …, 2021 - ieeexplore.ieee.org
When the input signal has been interfered and glitches occur, the power consumption of Double-Edge Triggered Flip-Flops (DETFFs) will significantly increase. To effectively reduce …
A Rawat, M Kumar - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
In the presence of signal interference and glitches, Double-Edge Triggered Flip-Flops (DETFFs) experience a substantial rise in power consumption. To address this issue and …
IC Wey, CH Chen, SZ Fang… - … Conference on Ubiquitous …, 2019 - ieeexplore.ieee.org
In the wireless IoT applications, low power is a critical criteria, and low-voltage is a direct way to meet such demand. However, low-voltage criteria in advanced CMOS VLSI designs …
IC Wey, SZ Fang, HJ Chou… - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
In the advanced CMOS VLSI designs, lower supply voltage and smaller transistor lead to critical design challenges in dealing with soft-error interference, especial for the deisgn …
Z Huang, W Zhong, L Duan, Y Zhang… - Journal of Circuits …, 2022 - World Scientific
Glitch at the input can increase the power consumption of flip-flop greatly. To solve this problem effectively, a Low-Power Anti-Glitch Double-Edge Triggered Flip-Flop Based on …
P Li, W Guo, Z Zhao, M Zhang, Q Deng - IEICE Electronics Express, 2015 - jstage.jst.go.jp
In this paper, the generation mechanism of single event upset reversal (SEUR) between 2 PMOS in SRAM cells is studied in depth based on 45nm CMOS technology. We find that …
Z Huang, X Li, S Pan, M Wang, T Ni - International Conference on …, 2020 - Springer
In nano-scale CMOS technologies, storage cells such as flip-flops are becoming increasingly sensitive to soft errors caused by harsh radiation effects. This paper proposes a …
As semiconductor process minimum linewidths have been scaled down to nanometers, digital computing circuits have become more and more complex. Meanwhile, these …