For many decades CMOS devices have been successfully scaled down to achieve higher
speed and increased performance of integrated circuits at lower cost. Today's charge-based …

There has been enormous progress in the last two decades, effectively combining
spintronics and magnetics into a powerful force that is shaping the field of memory devices …

The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the
leading candidate for spin-based memories. Nevertheless, the high write energy and read …

Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic
devices, have been used to build true random number generators (TRNGs) with different …

Spin circuits with four component voltages and currents have been developed and used in
the past to analyze various structures, which include non-collinear ferromagnets. Recent …

Voltage-controlled spintronic devices are considered promising candidates for low-power
applications due to the nonvolatility and the elimination of the Joule heating energy …

Driven by the need to address both the von Neumann bottleneck and scaling limits predicted
by Moore's law, spintronic devices have been shown to be strong contenders for logic‐in …

In this paper, we propose a spin-based true random number generator (TRNG) that uses the
inherent stochasticity in nanomagnets as the source of entropy. In contrast to previous works …

To overcome the performance bottleneck of the CMOS-only logic circuits, logic-in-memory
(LiM)-based circuits can be used. Herein, the memory and logic are combined to reduce the …

In this paper, a conventional spin-valve configuration combined with spin-torque-driven
switching is used as an energy efficient interconnect structure for all-spin logic. Both Cu and …