[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
When nanowires meet ultrahigh ferroelectric field–high-performance full-depleted nanowire photodetectors
One-dimensional semiconductor nanowires (NWs) have been widely applied in
photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier …
photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier …
High‐performance ferroelectric polymer side‐gated CdS nanowire ultraviolet photodetectors
An efficient ferroelectric‐enhanced side‐gated single CdS nanowire (NW) ultraviolet (UV)
photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from …
photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from …
Carbon nanotube ferroelectric random access memory cell based on omega-shaped ferroelectric gate
This paper presents a flexible ferroelectric random access memory (FeRAM) cell with a one-
transistor-one-transistor structure. The FeRAM cell was composed of a control transistor (CT) …
transistor-one-transistor structure. The FeRAM cell was composed of a control transistor (CT) …
Fabrication of non-volatile memory transistor by charge compensation of interfacial ionic polarization of a ferroelectric gate dielectric
Lithium niobate (LiNbO 3) is a popular lead free perovskite ferroelectric materials, but its
implementation as a gate dielectric for developing a ferroelectric thin film transistor (FeTFT) …
implementation as a gate dielectric for developing a ferroelectric thin film transistor (FeTFT) …
Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET
A stable doping technique for modifying the conduction behaviour of two-dimensional (2D)
nanomaterial-based transistors is imperative for applications based on low-power …
nanomaterial-based transistors is imperative for applications based on low-power …
Ultralow-power non-volatile memory cells based on P (VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors
Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS)
nonvolatile memory devices were successfully fabricated by utilizing single n-and p-type Si …
nonvolatile memory devices were successfully fabricated by utilizing single n-and p-type Si …
Ultraviolet–Visible Photodetector Driven by Local Electrostatic Field from Chargeable Electret
L Luo, R Hao, X Hu, Y Li, E Xie… - Advanced Optical …, 2023 - Wiley Online Library
Metal oxide semiconductors have been developed for ultraviolet–visible photodetectors, but
improving sensitivity has remained a challenge due to poor mobility and carrier losses. In …
improving sensitivity has remained a challenge due to poor mobility and carrier losses. In …
A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation
KS Sriramadasu, YM Hsin - Japanese Journal of Applied Physics, 2024 - iopscience.iop.org
This study proposes a new gate architecture that integrates both a p-GaN gate and a metal–
insulator–semiconductor (MIS) structure for a normally-off AlGaN/GaN high electron mobility …
insulator–semiconductor (MIS) structure for a normally-off AlGaN/GaN high electron mobility …