An accurate cost effective DFT approach to study the sensing behaviour of polypyrrole towards nitrate ions in gas and aqueous phases
Density functional theory (DFT) calculations have been performed to study the response of
polypyrrole towards nitrate ions in gas and aqueous phases. First, an accurate estimate of …
polypyrrole towards nitrate ions in gas and aqueous phases. First, an accurate estimate of …
Impact of intrinsic channel scaling on InGaAs quantum-well MOSFETs
J Lin, DA Antoniadis… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Using a novel gate-last process scheme that affords precise channel thickness control, we
have fabricated self-aligned InGaAs quantum-well (QW) MOSFETs. Devices with a channel …
have fabricated self-aligned InGaAs quantum-well (QW) MOSFETs. Devices with a channel …
[HTML][HTML] Transport and quantum lifetimes of electrons in modulation doped Al0. 3Ga0. 7As/In0. 15Ga0. 85As double quantum well structure
The enhancement of transport and quantum lifetimes of electrons in barrier delta-doped Al
0.3 Ga 0.7 As/In 0.15 Ga 0.85 As pseudomorphic Double-Quantum-Well structure is …
0.3 Ga 0.7 As/In 0.15 Ga 0.85 As pseudomorphic Double-Quantum-Well structure is …
Physics and mitigation of excess OFF-state current in InGaAs quantum-well MOSFETs
J Lin, DA Antoniadis… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
A number of recent reports have noted excess OFF-state leakage current (in scaled InGaAs
quantum-well nMOSFETs. There is growing evidence that a combination of band-to-band …
quantum-well nMOSFETs. There is growing evidence that a combination of band-to-band …
Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V
CY Huang, S Lee, V Chobpattana… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
We report InGaAs-channel MOSFETs using recessed InP spacer layers in the regrown
source and drain. By replacing narrow band-gap InGaAs with wide band-gap InP within the …
source and drain. By replacing narrow band-gap InGaAs with wide band-gap InP within the …
Modulation of electron transport and quantum lifetimes in symmetric and asymmetric AlGaAs/InGaAs double quantum well structures
The low-temperature electron transport (τ t) and quantum (τ q) lifetimes are modulated as a
function of applied electric field (F) in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As-based symmetric …
function of applied electric field (F) in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As-based symmetric …
Excess off-state current in InGaAs FinFETs
We present a detailed study of the off-state leakage current in scaled self-aligned InGaAs
FinFETs. In long-channel devices, band-to-band tunneling at the drain-end of the channel is …
FinFETs. In long-channel devices, band-to-band tunneling at the drain-end of the channel is …
A comparison of analog performance, linearity, and distortion characteristics between symmetric InGaAs and asymmetric InGaAs/InP MOSFETs
E Datta, A Chattopadhyay… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, we report an investigation of analog performance, linearity, and harmonic
distortion (HD) characteristics for both symmetric and asymmetric InGaAs n-channel …
distortion (HD) characteristics for both symmetric and asymmetric InGaAs n-channel …
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
JN Yao, YC Lin, MS Lin, TJ Huang, HT Hsu, SM Sze… - Solid-State …, 2019 - Elsevier
In this study, we have presented a source-connected field plate (SCFP) InAs high electron
mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power …
mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power …
III-V Devices and technology for CMOS
N Waldron - High Mobility Materials for CMOS Applications, 2018 - Elsevier
In this chapter, advances in the use of III-V materials for both n-and p-MOSFET devices will
be reviewed including progress in gate stack technology and its associated reliability. For …
be reviewed including progress in gate stack technology and its associated reliability. For …