Fabrication and Characterization of a Photodiode Based on 5′,5′′-dibromo-o-cresolsulfophthalein (BCP)
AM Mansour - Silicon, 2019 - Springer
Abstract 5′, 5′′ ^′,5^′′-dibromo-o-cresolsulfophthalein (BCP) films were deposited
on glass, quartz, and n-Si substrates by using conventional thermal evaporation method …
on glass, quartz, and n-Si substrates by using conventional thermal evaporation method …
Design, fabrication and optical characterizations of pyrimidine fused quinolone carboxylate moiety for photodiode applications
Abstract A novel ethyl 3-amino-2-cyano-6-hydroxy-7, 12-dioxo-2, 7, 12, 12a-tetrahydro-1H-
benzo [g] pyrimido [1, 2-a] quinoline-5-carboxylate (3ABPQC) was synthesized by treating …
benzo [g] pyrimido [1, 2-a] quinoline-5-carboxylate (3ABPQC) was synthesized by treating …
Photovoltaic properties of the 4H-pyrano [3, 2-c] quinoline derivatives and their applications in organic–inorganic photodiode fabrication
Abstract 2-Amino-6-ethyl-5-oxo-4-(3-Ph)-5, 6-dihydro-4H-pyrano [3, 2- c] quinoline-3-
carbonitrile (Ph-HPQ) and 2-Amino-4-(2-Cl)-6-ethyl-5- oxo-5, 6-dihydro-4H-pyrano [3, 2-c] …
carbonitrile (Ph-HPQ) and 2-Amino-4-(2-Cl)-6-ethyl-5- oxo-5, 6-dihydro-4H-pyrano [3, 2-c] …
A comparative study on electrical characteristics of Ni/n-Si and Ni/p-Si Schottky diodes with Pinus Sylvestris Resin interfacial layer in dark and under illumination at …
In this study, we evaluated the potential use of the Pinus Sylvestris Resin (PSR) organic
material in the metal/interface layer/semiconductor Schottky diode (SD) structure as an …
material in the metal/interface layer/semiconductor Schottky diode (SD) structure as an …
Structural, morphological and optical properties of ZnSe quantum dot thin films
ZnSe powder was prepared via hydrothermal technique using zinc acetate and sodium
selenite as source materials. The prepared ZnSe powder was used for preparing film with …
selenite as source materials. The prepared ZnSe powder was used for preparing film with …
Fabrication of a new hybrid coronene/n-Si structure by using spin coating technique and its photoresponse and admittance spectroscopy studies
Abstract Coronene/n-Si Schottky structure has been fabricated by Coronene thin film
deposited on n-Si substrate using the spin coating technique. The current-voltage (IV) …
deposited on n-Si substrate using the spin coating technique. The current-voltage (IV) …
Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye
Bromothymol blue (BTB) with the molecular formula of C 27 H 28 Br 2 O 5 S was grown onto
p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (IV) …
p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (IV) …
Controlling of the photosensing properties of Al/DMY/p-Si heterojunctions by the interface layer thickness
Organic-inorganic heterojunction was fabricated by inserting an interlayer having with three
different thicknesses on the p-Si substrate. The current voltage (I–V) data of different …
different thicknesses on the p-Si substrate. The current voltage (I–V) data of different …
Physical characteristics of naturally isolated high-purity curcumin and its application in photosensor appliances
In this work, curcumin is naturally isolated from Curcuma longa rhizomes, and is carefully
purified for the use in optoelectronic devices. Column chromatography technique is used to …
purified for the use in optoelectronic devices. Column chromatography technique is used to …
Optoelectronic and photo response performance of n-tris phenylpyridinato iridium/p-Si heterojunction device for photovoltaic applications
DG El-Damhogi, MM El-Shabaan, KT Abul-Nasr… - Chinese Journal of …, 2023 - Elsevier
Abstract Tris 2-phenylpyridinato-C 2, N Iridium III [Ir (ppy) 3], was evaporated onto a p-type
silicon sheet using a thermal evaporation process to create an n-Ir (ppy) 3/p-Si junction …
silicon sheet using a thermal evaporation process to create an n-Ir (ppy) 3/p-Si junction …