The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most
technologically important parameters. We report the band offsets of the Al/Al 2 O 3/GaAs …

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs
treated with HCl cleaning and (NH 4) 2 S passivation has been characterized. Synchrotron …

The mechanism of the negative persistent photoconductivity NPPC in InAs/AlSb single
quantum wells is discussed. The molecular beam epitaxy grown single InAs quantum well …

High-density plasma CVD (HDP CVD) silicon nitride has been investigated for its use in
advanced interconnect applications. Results show that the HDP film has many excellent film …

X‐ray diffraction measurements in the region of small incidence and exit angles on thin
amorphous silicon/germanium films on laterally structured surfaces are performed. From fits …

High-k gate dielectric YO x N y films were prepared by reactive sputtering. The effects of
postdeposition annealing on the structure and optical properties of YO x N y films have been …

The effect of silicon to nitrogen ratios in a pre-metal silicon nitride dielectric film on
NMOSFET channel hot carrier (CHC) reliability is studied. Si/sub x/N/sub y/: H/sub z/films are …