It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and
semipolar orientations were first demonstrated. Prominent performance and inherent …

The most successful example of large lattice-mismatched epitaxial growth of semiconductors
is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and …

This work represents a comprehensive attempt to correlate the heteroepitaxial dynamics in
experiments with fundamental principles in crystal growth using the kinetic Wulff plot (or v …

For nonpolar and semipolar orientations of GaN heteroepitaxially grown on sapphire
substrates, the development of growth procedures to improve surface morphology and …

Adopting anisotropy etching method, a (111) facet of Si is obtained on a Si substrate and
selective area growth (SAG) of GaN is performed with metal-organic vapor phase epitaxy on …

The theoretical expectation of semi‐polar light emitting diodes (LEDs) is reviewed and
compared it to the experimental data. The reported peak internal quantum efficiency (IQE) of …

We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the
green, yellow-green, yellow and amber spectral region. The LEDs are grown on our …

This review represents the last achievements in synthesis of epitaxial layers of gallium
nitride (GaN) on silicon (Si) substrate. The basic physical, crystallography and physical …

The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content
on Si (100) substrate faces significant challenges. The study described in this paper focuses …

Abstract Growth of semi-polar (1–101) GaN has been attempted on a patterned (001) silicon
substrate adopting selective area MOVPE. The growth was initiated on (111) facets of the Si …