Magnetic structure based on synthetic antiferromagnetic free layer and derivative SOT-MRAM
T Min, Z Xue, X Zhou, L Wang - US Patent 10,734,054, 2020 - Google Patents
A magnetic structure includes a magnetic tunnel junction based on a synthetic
antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer …
antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer …
Method to reduce baseline shift for a SOT differential reader
Q Le, X Liu, Z Bai, Z Li, K San Ho, H Takano - US Patent 11,222,656, 2022 - Google Patents
The present disclosure generally relates to spin-orbital torque (SOT) differential reader
designs. The SOT differen tial reader is a multi-terminal device that comprises a first shield, a …
designs. The SOT differen tial reader is a multi-terminal device that comprises a first shield, a …
Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element
T Sasaki, Y Shiokawa - US Patent 10,910,554, 2021 - Google Patents
(57) ABSTRACT A spin-current magnetization rotational element includes a spin orbit torque
wiring extending in a first direction and a first ferromagnetic layer disposed in a second …
wiring extending in a first direction and a first ferromagnetic layer disposed in a second …
BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices
Q Le, BR York, C Hwang, S Okamura, X Liu… - US Patent …, 2022 - Google Patents
The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction
(MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modu lation …
(MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modu lation …
Doping process to refine grain size for smoother BiSb film surface
Q Le, C Hwang, BR York, RG Simmons, X Liu… - US Patent …, 2024 - Google Patents
The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction
(MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) …
(MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) …
BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices
Q Le, BR York, C Hwang, S Okamura, X Liu… - US Patent …, 2024 - Google Patents
The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a
topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of …
topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of …
Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices
Q Le, BR York, C Hwang, X Liu, MA Gribelyuk… - US Patent …, 2024 - Google Patents
The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a
bismuth antimony (BiSb) layer. The SOT devices further comprise one or more Ge X NiFe …
bismuth antimony (BiSb) layer. The SOT devices further comprise one or more Ge X NiFe …
Magnetic sensor using spin orbit torque and sensing method using same
JH Kwon, JS Lee, H Lee, SJ Noh - US Patent App. 17/710,123, 2023 - Google Patents
2022-03-31 Assigned to HYUNDAI MOTOR COMPANY, KIA CORPORATION reassignment
HYUNDAI MOTOR COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE …
HYUNDAI MOTOR COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE …
Magnetic memory device
T Oikawa, EEH Youngmin, E Kitagawa… - US Patent …, 2024 - Google Patents
According to one embodiment, a magnetic memory device includes a first magnetic layer
having a variable magnetisation direction, a second magnetic layer having a fixed …
having a variable magnetisation direction, a second magnetic layer having a fixed …
SOT reader using BiSb topological insulator
Q Le, BR York, X Liu, C Hwang, MA Gribelyuk… - US Patent …, 2024 - Google Patents
The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices
each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic …
each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic …