2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
S Kim, G Myeong, W Shin, H Lim, B Kim, T Jin… - Nature …, 2020 - nature.com
The continuous down-scaling of transistors has been the key to the successful development
of current information technology. However, with Moore's law reaching its limits, the …
of current information technology. However, with Moore's law reaching its limits, the …
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
The role of 2-Dimensional materials for electronic devices
Dimensional materials play a vital role in science, engineering, and provide applications in
areas like electronics displays, wearable devices, the internet of things, transport, space …
areas like electronics displays, wearable devices, the internet of things, transport, space …
Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions
P Chava, Z Fekri, Y Vekariya, T Mikolajick… - Applied Physics …, 2023 - pubs.aip.org
Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …
Recent advances in low‐dimensional heterojunction‐based tunnel field effect transistors
Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …
improvement is achieved in the switching speed. However, the rising leakage current …
[HTML][HTML] Two-dimensional pnictogen for field-effect transistors
Abstract Two-dimensional (2D) layered materials hold great promise for various future
electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D …
electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D …
MoS2 based Thickness Engineered Tunnel field-effect transistors for RF/analog applications
In this work, a novel 2D material-based Thickness Engineered Tunnel FET (MoS 2 TE-TFET)
has been proposed and investigated. The impact of channel layer thickness variation on …
has been proposed and investigated. The impact of channel layer thickness variation on …
Layer engineering piezotronic effect in two-dimensional homojunction transistors
The semiconductor junctions based on piezoelectric materials are of great importance for
the realization of functionality and versatility in sensing devices. Two-dimensional (2D) …
the realization of functionality and versatility in sensing devices. Two-dimensional (2D) …