Advancements for organic thin film transistors: Structures, materials, performance parameters, influencing factors, models, fabrication, reliability and applications
This paper highlights the recent progress for organic small molecule and polymer type thin
film transistors (OTFTs). In order to better understand the conduction process and mapping …
film transistors (OTFTs). In order to better understand the conduction process and mapping …
Progress and challenges in p-type oxide-based thin film transistors
ZW Shang, HH Hsu, ZW Zheng… - Nanotechnology Reviews, 2019 - degruyter.com
Transparent electronics has attracted much attention and been widely studied for next-
generation high-performance flat-panel display application in the past few years, because of …
generation high-performance flat-panel display application in the past few years, because of …
High‐performance vacuum‐processed metal oxide thin‐film transistors: a review of recent developments
Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …
publication of more than 1,300 related papers. Although the number of researches on oxide …
High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring
The development of p-type metal-oxide semiconductors (MOSs) is of increasing interest for
applications in next-generation optoelectronic devices, display backplane, and low-power …
applications in next-generation optoelectronic devices, display backplane, and low-power …
Enhanced performance of p-type SnO x thin film transistors through defect compensation
Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess
small effective mass and high mobility among oxide semiconductors, making it a promising p …
small effective mass and high mobility among oxide semiconductors, making it a promising p …
Extraction of SnO subbandgap defect density by numerical modeling of p-type TFTs
Recently, p-type tin monoxide (SnO) thin-film transistors (TFTs) have gained interest for all-
oxide complementary metal–oxide semiconductor (CMOS) circuits for flexible electronics …
oxide complementary metal–oxide semiconductor (CMOS) circuits for flexible electronics …
Solution-processed high-performance p-channel copper tin sulfide thin-film transistors
We introduced solution-processed copper tin sulfide (CTS) thin films into thin-film transistors
(TFTs) by varying the CTS precursor solution concentration. Systematic analysis of the …
(TFTs) by varying the CTS precursor solution concentration. Systematic analysis of the …
A comprehensive density-of-states model for oxide semiconductor thin film transistors
K Rajshekar, D Kannadassan - Journal of Computational Electronics, 2021 - Springer
In this paper, a novel and comprehensive density-of-states model is presented to
understand the origin of conductivity and the performance of p-type and n-type oxide …
understand the origin of conductivity and the performance of p-type and n-type oxide …
Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
ZW Shang, Q Xu, GY He, ZW Zheng… - Journal of Materials …, 2021 - Springer
In this study, the plasma oxidation effect in tin-oxide (SnO x) thin film was investigated. And
on this basis, we fabricated n-type thin-film transistors (TFTs) using the SnO x thin film with …
on this basis, we fabricated n-type thin-film transistors (TFTs) using the SnO x thin film with …
Influence of surface trap states on RF/microwave performance of lateral AlGaN/GaN Schottky barrier diode
D Shaikshavali, D Kannadassan - Journal of Electromagnetic …, 2022 - Taylor & Francis
In this paper, we have presented the influence of surface traps/states on RF and microwave
performance of fully recessed Schottky anode AlGaN/GaN lateral Schottky barrier diode (L …
performance of fully recessed Schottky anode AlGaN/GaN lateral Schottky barrier diode (L …