Ultrafast photocarrier dynamics in Fe-implanted InGaAs polycrystalline photoconductive materials
We investigate the ultrafast photoconductivity and charge-carrier transport in thermally
annealed Fe-implanted InGaAs/InP films using time-resolved terahertz spectroscopy. The …
annealed Fe-implanted InGaAs/InP films using time-resolved terahertz spectroscopy. The …
Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP: Fe Photoconductors
A terahertz (THz) time-domain spectrometer built entirely from a pair of emitter and detector
made on ion-implanted InGaAsP: Fe substrates is characterized for the first time. THz …
made on ion-implanted InGaAsP: Fe substrates is characterized for the first time. THz …
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …