We have carried out first-principles spin-polarized calculations in order to study the
energetics and electronic structure of vanadium adsorption and incorporation on GaN …

First-principles calculations within the density functional theory (DFT) framework were used
to study the electronic and magnetic properties of BN in its wurtzite structure (w-BN); …

Recent progress in manufacturing high-electron-mobility transistors and optoelectronic
devices highlights the necessity of understanding the charge dynamics and its impact on the …

Metal organic chemical vapor deposition (MOCVD) has been used to grow vanadium-doped
GaN (GaN: V) on c-sapphire substrate using VCl4 as the V source. The as-grown GaN: V …

We report an ab-initio study of the pressure effects on the electronic and the magnetic
properties of GaxV1− xN compounds (x= 0.25, 0.50 and 0.75) in wurtzite-derived structures …

由于GaN 材料本身具有的极大优越性, 如大禁带宽度, 高临界场强, 高热导率, 高载流子饱和速率,
高异质结界面二维电子气浓度等, 决定了GaN 基材料及其器件在发光半导体材料领域中的重要 …

V‐doped GaN thin films were grown on c‐sapphire substrate by metal organic chemical
vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl4) to …

The infrared luminescence of vanadium‐doped gallium nitride (GaN: V) grown by
metalorganic vapour phase epitaxy technique (MOVPE) on SiN‐treated sapphire substrate …

Using first principles total-energy calculations within the framework of density functional
theory, the relative stability and the structural and electronic properties of a VN/GaN/VN …

Using the first-principles in the framework of density functional theory, the structural
properties, electronic structure, and magnetism of V-doped aluminum nitride (AlN) were …