[HTML][HTML] Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection
Transient microwave reflectance (TMR) measurements are used to characterize the minority
carrier lifetime and background carrier concentration of unintentionally doped (UID) Ga 0.5 …
carrier lifetime and background carrier concentration of unintentionally doped (UID) Ga 0.5 …
Contactless Characterization of Carrier Dynamics in Infrared Materials
AM Arquitola - 2024 - search.proquest.com
Contactless, nondestructive measurements of minority carrier lifetime by transient
microwave reflectance (TMR) and photoluminescence are used to study the carrier …
microwave reflectance (TMR) and photoluminescence are used to study the carrier …
Investigation of recombination mechanisms in GaAsSb photodiodes using minority carrier lifetime measurements
We investigate the origin of dark current by studying the bulk and surface recombination
mechanisms using temperaturedependent minority carrier lifetime measurements of …
mechanisms using temperaturedependent minority carrier lifetime measurements of …