The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

Generation of ultra-wideband microwave utilizing a low-energy-triggered bulk gallium
arsenide (GaAs) avalanche semiconductor switch with ultrafast switching is presented. The …

A novel type of optical beam scanning device based on the same principle as a phased
array radar has been made and demonstrated. This phased array optical scanning device …

This letter presents a low-energy-triggered bulk gallium arsenide (GaAs) avalanche
semiconductor switch with delayed breakdown. The actual optical energy contributing to …

Optical on-off modulators require low insertion loss, high contrast ratio (CR), small drive
power and large bandwidth or bit-rate. A systematic approach to optimize the total …

An experimental study of factors determining the optical feedback efficiency in the structure
of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that …

摘要该文建立了砷化镓(GaAs) 光导开关(PCSS) 的一维器件仿真模型, 研究了低光能触发条件下
电流通道内关键物理参数的瞬态变化过程, 提出了GaAs PCSS 的多雪崩电离畴物理模型 …

Gamma Delta alpha/F and Delta alpha/alpha/sub 0/(where Delta alpha is the absorption
change, alpha/sub 0/is the residual absorption, F is the applied electric field, and Gamma is …

Electro-absorption modulators, either embedded in CMOS technology or integrated with a
semiconductor laser, are of high interest for many applications such as optical …

A systematic approach for optimizing the performance of a multiple quantum well
electroabsorption waveguide modulator is presented. The primary criterion of the modulator …