ZnO is a II–VI semiconductor with a band gap energy (Eg) of 3.37 eV at room temperature. It
is a potential competitor of GaN and SiC for ultraviolet and blue light-emitter and detector …

A survey of recent experimental results is given, presenting the growth of oxide epitaxial thin
films in P− T− x conditions, which are far from those necessary for the existence of …

Optical properties in undoped-ZnO epilayers grown by the laser-molecular-beam epitaxy
method on lattice-matched ScAlMgO4 substrates were investigated. The absorption …

Optical properties of ZnO bulk grown by hydrothermal method were investigated on the Zn-
terminated surface by using Raman scattering and photoluminescence (PL). The typical …

We report the experimental results of the valence band offset at a ZnO/GaN (0001)
heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on …

The role of the substrate temperature on the structural, optical, and electronic properties of
ZnO thin films deposited by spray pyrolysis using a zinc acetate precursor solution is …

This Research Article discusses the growth of polycrystalline, self-supporting ZnO
nanofibers, which can detect nitrogen dioxide (NO2) gas down to 1 part per billion (ppb) …

Lateral epitaxial overgrowth (LEO) of ZnO has been demonstrated in water at 90° C. The
process starts with hydrothermal epitaxial growth of ZnO (0001) on MgAl2O4 (111), followed …

We have investigated the optical and structural properties of high-quality ZnO films grown on
epitaxial GaN (epi-GaN) by plasma-assisted molecular-beam epitaxy employing low …

We present photoluminescence (PL) studies of GaN and ZnO nanocrystallites and powders.
Our studies show that in addition to the intrinsic photoluminescence characteristics, the …