Background: Electronic device scaling with the advancement of technology nodes maintains
the performance of the logic circuits with area benefit. Metal oxide semiconductor (MOS) …

We investigate the negative-bias temperature instability (NBTI) degradation and recovery of
pMOSFETs under continuously varying analog-circuit stress voltages and thereby …

A SPICE compatible compact modeling framework is proposed for the time kinetics of
threshold voltage shift (ΔV T) in FinFETs subjected to hot carrier degradation (HCD) stress …

Over the past decades, the continued scaling of transistors has reduced the energy
consumption for every switching event and has increased the computational power of …

Through tremendous experimental data, this study focuses on the cycle-to-cycle variation
(CCV) in ultra-scaled FinFETs at the GHz circuit speed, which is an urgent demand for the …

Damping constant ξ FE is the key parameter that determines the maximum operating speed
of the negative capacitance ferroelectric field-effect transistor (NC-FET). While most studies …

In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time
down to ns-scale utilizing the fast V th measurement (FVM) technique. It is found that the …

Metal-oxide-semiconductor (MOS) devices are a key driver of modern technologies. Of
particular importance are MOS field-effect transistors (MOSFETs), which act as binary …

In this paper, we have monitored the cycle-to-cycle variation (CCV) of ultra-scaled FinFETs
during hot carrier degradation (HCD) and bias temperature instability (BTI) stress. Different …

In this study, we report an ultra-fast CV (> 4 GHz) measurement methodology for
characterizing the high-frequency polarization phenomena in high-k dielectric films (HfO 2 …