The germanium quantum information route

G Scappucci, C Kloeffel, FA Zwanenburg… - Nature Reviews …, 2021 - nature.com
In the effort to develop disruptive quantum technologies, germanium is emerging as a
versatile material to realize devices capable of encoding, processing and transmitting …

Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots

HA Nilsson, P Caroff, C Thelander, M Larsson… - Nano …, 2009 - ACS Publications
We report on magnetotransport measurements on InSb nanowire quantum dots. The
measurements show that the quantum levels of the InSb quantum dots have giant g factors …

Strong spin-orbit interaction and helical hole states in Ge/Si nanowires

C Kloeffel, M Trif, D Loss - Physical Review B—Condensed Matter and …, 2011 - APS
We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-
energy valence band is quasidegenerate, formed by two doublets of different orbital angular …

Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions

C Kloeffel, MJ Rančić, D Loss - Physical Review B, 2018 - APS
We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires
(NWs). The NW core in our model has a rectangular cross section, the results for a square …

Electrical control of single hole spins in nanowire quantum dots

VS Pribiag, S Nadj-Perge, SM Frolov… - Nature …, 2013 - nature.com
The development of viable quantum computation devices will require the ability to preserve
the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum …

Pauli spin blockade of heavy holes in a silicon double quantum dot

R Li, FE Hudson, AS Dzurak, AR Hamilton - Nano letters, 2015 - ACS Publications
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based
double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map …

Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits

Z Wang, E Marcellina, AR Hamilton, JH Cullen… - npj Quantum …, 2021 - nature.com
Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin
qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is …

Heavy-hole states in germanium hut wires

H Watzinger, C Kloeffel, L Vukusic, MD Rossell… - Nano …, 2016 - ACS Publications
Hole spins have gained considerable interest in the past few years due to their potential for
fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far …

[HTML][HTML] Formation of strain-induced quantum dots in gated semiconductor nanostructures

T Thorbeck, NM Zimmerman - AIP Advances, 2015 - pubs.aip.org
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there
so many unintentional dots (also known as disorder dots) which are neither expected nor …