A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
Design of a wideband Doherty power amplifier with high efficiency for 5G application
This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable
for 5G applications. Theoretical analysis of the output matching network is presented …
for 5G applications. Theoretical analysis of the output matching network is presented …
Deliberate Source/Load Mismatch for Linearity and Efficiency of Discrete Supply Modulated GaN PAs
C Nogales, P Flaten, M Olavsbråten… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
The effect of source (gate-side) and load (drain-side) impedance match on the linearity and
efficiency of an envelope-tracked power amplifier (PA) is investigated. Conventionally …
efficiency of an envelope-tracked power amplifier (PA) is investigated. Conventionally …
Design of an efficiency enhanced wideband Doherty power amplifier based on synthesising of a modified harmonic‐control load modulation network
AME Abounemra, M Helaoui… - IET Microwaves …, 2024 - Wiley Online Library
A design of a broadband Doherty power amplifier (DPA) using a novel harmonic control
network (HCN) is presented. The DPA structure focused on manipulating harmonic …
network (HCN) is presented. The DPA structure focused on manipulating harmonic …
TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance
In this paper, DC and RF characteristics of Recess Gate Common Drain Dual Channel
(CDDC) AlGaN/GaN HEMT have been investigated. The performance of the device in terms …
(CDDC) AlGaN/GaN HEMT have been investigated. The performance of the device in terms …
Efficiency Enhancement of Power Amplifier Using Power Pulsewidth Modulation for Wireless Power Transfer
C Yang, K Jin, W Zhou, H Hu… - IEEE Microwave and …, 2024 - ieeexplore.ieee.org
Power amplifier (PA) is the core device for dc-RF conversion in wireless power transfer
(WPT) system. However, the drain efficiency (DE) of PA decreases significantly due to the …
(WPT) system. However, the drain efficiency (DE) of PA decreases significantly due to the …
Load-pull data analysis of a GaN on SiC HEMT targeting multi bias Doherty design
EM Azad, R Quaglia, JJ Bell… - … and Millimetre-Wave …, 2022 - ieeexplore.ieee.org
This paper presents an analysis of load-pull measurement data of a GaN on SiC high
electron mobility transistor (HEMT) at 3.6 GHz, oriented to aid the design of Doherty power …
electron mobility transistor (HEMT) at 3.6 GHz, oriented to aid the design of Doherty power …
Efficiency enhancement of a broadband sequential power amplifier using envelope tracking
This paper demonstrates the first realisation of a sequential power amplifier (SPA) with
envelope tracking (ET). Composed of a 10 W main PA and a 23 W peaking PA, the 1.6–2.4 …
envelope tracking (ET). Composed of a 10 W main PA and a 23 W peaking PA, the 1.6–2.4 …
A 28GHz Harmonic Injection Doherty Power Amplifier
A Amirkhani, N Choupan… - 2021 Iranian International …, 2021 - ieeexplore.ieee.org
In this paper, a 28 GHz fully on-chip Doherty power amplifier with harmonic injection is
presented in 65 nm CMOS technology. In order to improve the linearity, two injection …
presented in 65 nm CMOS technology. In order to improve the linearity, two injection …
Optimising linearity of envelope tracking power amplifier using baseband linearisation approach
The aim of this paper is to improve the linearity of an envelope tracking (ET) power amplifier
(PA) using a simple baseband linearisation approach (BLA), which releases the requirement …
(PA) using a simple baseband linearisation approach (BLA), which releases the requirement …